Ion Beam Mixing In Silicon Systems

Bruce M. Paine

doi:10.1117/12.946475

9 April 1985 Ion Beam Mixing In Silicon Systems

Bruce M. Paine

Proceedings Volume 0530, Advanced Applications of Ion Implantation; (1985) https://doi.org/10.1117/12.946475
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

A brief review is presented of the basic properties of ion beam mixing of layers of material on Si and Si0₂, and current models for the observed phenomena. Following this, some potential applications of ion beam mixing to processing of Si devices are reviewed. These applications are: (1) dispersal of impurities which would otherwise block thermal reactions, (2) formation of uniform, well-aligned metal-silicide contacts to devices, and (3) adhesion of metal interconnects to Si0₂ layers. In each of these, the mixing is executed with a simple implantation step, conducted at room temperature. The alternative processes are mostly either more complex, or require annealing at very high temperatures.

Citation Download Citation

Bruce M. Paine "Ion Beam Mixing In Silicon Systems", Proc. SPIE 0530, Advanced Applications of Ion Implantation, (9 April 1985); https://doi.org/10.1117/12.946475

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