Architectural choices for EUV lithography masks: patterned absorbers and patterned reflectors

Bruno La Fontaine; Adam R. Pawloski; Yunfei Deng; Christian Chovino; Laurent Dieu; Obert R. Wood II; Harry J. Levinson

doi:10.1117/12.539074

20 May 2004 Architectural choices for EUV lithography masks: patterned absorbers and patterned reflectors

Bruno La Fontaine, Adam R. Pawloski, Yunfei Deng, Christian Chovino, Laurent Dieu, Obert R. Wood II, Harry J. Levinson

Proceedings Volume 5374, Emerging Lithographic Technologies VIII; (2004) https://doi.org/10.1117/12.539074
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Photoresist patterning experiments on the EUVL Engineering Test Stand using two masks with different types of architecture indicate that etched-multilayer binary masks can provide larger process latitude than standard patterned absorber masks. The trends observed in the experimental data are confirmed by rigorous electromagnetic simulations taking into account the mask structure, the imaging optics characteristics and the illumination conditions.

Citation Download Citation

Bruno La Fontaine, Adam R. Pawloski, Yunfei Deng, Christian Chovino, Laurent Dieu, Obert R. Wood II, and Harry J. Levinson "Architectural choices for EUV lithography masks: patterned absorbers and patterned reflectors", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.539074

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