Paper
20 May 2004 EUVL ML blank fiducial mark generation via local heating
Pei-Yang Yan, Cameron Wagner
Author Affiliations +
Abstract
One of the greatest challenges for extreme ultraviolet lithography (EUVL) technology is the development of a nearly defect-free mask blanks. For EUVL mask blanks with a few printable multi-layer (ML) defects, several defect mitigation methodologies have been proposed. It includes directly repairing small ML phase and amplitude defects,1-2 mask absorber pattern proximity repair,3 and using absorber pattern to cover the ML defects. In each case, the ML defects first need to be identified and located during the ML blank defect inspection. To precisely locate the ML defects on the blank, fiducial marks on the ML blank are needed for mask alignment and defect location identification. In this study, we have demonstrated that EUVL mask ML blank fiducial mark with 60nm trench depth, which is more than 10X the required minimum detectable height of the defect inspection tool, can be generated via local heating. No material removal occurs. Therefore, it is a very clean process. These fiducial marks work for many inspection tools such as optical inspection tool, e-beam inspection tool, and EUV Aerial Image Monitor (AIM) inspection tool. The fiducial marks generated in the experiment were realized via laser heating. The locally heated Mo/Si ML converts to molybdenum silicide that has a low volume than that of Mo/Si ML. As a result, a trench or a mark is generated. The process is expected to have large process margin as the depth of the mark is determined by completely silicide the ML. Additional heating will not be able to further deepen the trench. Therefore, the temperature and heating time control should be loose.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pei-Yang Yan and Cameron Wagner "EUVL ML blank fiducial mark generation via local heating", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.537242
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Cited by 1 scholarly publication and 1 patent.
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KEYWORDS
Inspection

Extreme ultraviolet lithography

Atomic force microscopy

Laser marking

Photomasks

Molybdenum

Extreme ultraviolet

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