Paper
20 May 2004 Theoretical simulation of extreme UV radiation source for lithography
Kazumi Fujima, Katsunobu Nishihara, Toru Kawamura, Hiroyuki Furukawa, Takashi Kagawa, Fumihiro Koike, Richard More, Masakatsu Murakami, Takeshi Nishikawa, Akira Sasaki, Atsushi Sunahara, Vasillii Zhakhovskii, Takashi Fujimoto, Hajime Tanuma
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Abstract
A possible design window for extreme ultraviolet (EUV) radiation source has been introduced, which is needed for its realistic use for next generation lithography. For this goal, we have prepared a set of numerical simulation codes to estimate the conversion efficiency from laser energy to radiation energy with a wavelength of 13.5 nm with 2 % bandwidth, which includes atomic structure, opacity and emissibity and hydro dynamics codes. The simulation explains well the observed conversion efficiency dependence of incident power using GEKKO XII laser system as well as spectral shapes. It is found that the conversion efficiency into 13.5 nm at 2% bandwidth has its maximum of a few percent at the laser intensity 1-2 x 1011 W/cm2.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazumi Fujima, Katsunobu Nishihara, Toru Kawamura, Hiroyuki Furukawa, Takashi Kagawa, Fumihiro Koike, Richard More, Masakatsu Murakami, Takeshi Nishikawa, Akira Sasaki, Atsushi Sunahara, Vasillii Zhakhovskii, Takashi Fujimoto, and Hajime Tanuma "Theoretical simulation of extreme UV radiation source for lithography", Proc. SPIE 5374, Emerging Lithographic Technologies VIII, (20 May 2004); https://doi.org/10.1117/12.534989
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Cited by 3 scholarly publications.
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KEYWORDS
Ions

Extreme ultraviolet

Plasmas

Electrons

Tin

Lithography

Solids

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