Do we need complex resist models for predictive simulation of lithographic process performance?

Bernd Tollkuhn; Andreas Erdmann; Jeroen Lammers; Christoph Nolscher; Armin Semmler

doi:10.1117/12.534045

14 May 2004 Do we need complex resist models for predictive simulation of lithographic process performance?

Bernd Tollkuhn, Andreas Erdmann, Jeroen Lammers, Christoph Nolscher, Armin Semmler

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.534045
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

This paper describes different simplified simulation models which characterize the behavior of the photoresist during lithography processes. The effectiveness of these models is compared with the results of more physics and chemistry containing simulators. The strengths and weaknesses of the simplified models are demonstrated for practical applications. Simplified resist model parameters are calibrated for 193nm chemically amplified resists (CAR). The results are compared with calibration of full simulation models. The validity of the simulation models under different process conditions is investigated.

Citation Download Citation

Bernd Tollkuhn, Andreas Erdmann, Jeroen Lammers, Christoph Nolscher, and Armin Semmler "Do we need complex resist models for predictive simulation of lithographic process performance?", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.534045

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