Paper
28 May 2004 Synthesis of projection lithography for low-k1 via interferometry
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Abstract
The aerial image attained from an optical projection photolithography system is ultimately limited by the frequency information present in the pupil plane of the objective lens. Careful examination of the frequency distribution will allow the operation of such a system to be synthesized experimentally through the use of interferometric lithography. Synthesis is accomplished through single beam attenuation in a two-beam interference system, which is equivalent to adjusting the relative intensities of the primary diffraction orders in a projection system. Typical lithography conditions, such as defocus and partial coherence, can be synthesized efficiently using this technique. The metric of contrast has been utilized to assess the level of correlation between defocus in a projection system and interferometric synthesis. Simulations have shown that interferometric lithography can approximate the performance of a variety of projection system configurations with a significantly high degree of accuracy.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank Charles Cropanese, Anatoly Bourov, Yongfa Fan, Andrew Estroff, Lena V. Zavyalova, and Bruce W. Smith "Synthesis of projection lithography for low-k1 via interferometry", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.547727
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Cited by 4 scholarly publications.
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KEYWORDS
Lithography

Interferometry

Projection systems

Signal attenuation

Diffraction

Demodulation

Projection lithography

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