Paper
9 September 2004 Modeling of crystallization activation energy for GeTe-Sb2Te3-based phase change materials
Zhaohui Fan, Lisha Wang, David E. Laughlin
Author Affiliations +
Proceedings Volume 5380, Optical Data Storage 2004; (2004) https://doi.org/10.1117/12.556747
Event: Optical Data Storage Topical Meeting, 2004, Monterey, California, United States
Abstract
In this paper, we modeled the activation energies of GeSbTe type of phase change materials. This model is based on the analysis of the atomic bonding types in the amorphous state and the crystalline state. Both the bond numbers and bond energies were used to calculate the crystallization activation energies. The calculated crystallization activation energies of the as-deposited amorphous states match the experimental data in the literature. We also estimated the crystallization activation energies of the melt-quenched amorphous states for different GeTe-Sb2Te3 phase change materials. The results show that the activation energies of the melt-quenched amorphous state are 0.21~0.48 eV lower than those of the as-deposited amorphous state. This might explain the difference of the crystallization behaviors between the as-deposited and the melt-quenched amorphous states.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhaohui Fan, Lisha Wang, and David E. Laughlin "Modeling of crystallization activation energy for GeTe-Sb2Te3-based phase change materials", Proc. SPIE 5380, Optical Data Storage 2004, (9 September 2004); https://doi.org/10.1117/12.556747
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Cited by 4 scholarly publications.
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KEYWORDS
Crystals

Tellurium

Antimony

Germanium

Chemical species

Ferroelectric materials

Lithium

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