Paper
20 November 1985 Summary Of Recent Studies On AlGaAs/GaAs Radiation Hardened Photodiodes
J. J. Wiczer
Author Affiliations +
Proceedings Volume 0540, Southwest Conf on Optics '85; (1985) https://doi.org/10.1117/12.976109
Event: 1985 Albuquerque Conferences on Optics, 1985, Albuquerque, United States
Abstract
In this paper, we summarize the results of several studies assessing the radiation hardness of a new type of double heterojunction, A1GaAs/GaAs photodiode. These studies include transient and permanent damage experiments. Transient studies indicate that double heterostructure AlGaAs/GaAs photodiodes generate 40 times less photocurrent than conventional silicon photodiodes,Auring exposure to ionizing-radiation pulses. Permanent damage studies with neutrons, Coy' gamma rays, and high energy electron beam sources indicate only minor changes in operational characteristics after exposures. These studies have shown a 20% degradation in optical response and a factor of 8 increase in photodiode leakage current after exposure to 3.6 x 101-5 neutron/cm2 fluence. Conventional silicon photodiodes exhibit this type of degradation after exposures to 1012 - 1013 neutrons/cm2 fluences. These characteristics are important for many specialized applications requiring radiation hardness.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. J. Wiczer "Summary Of Recent Studies On AlGaAs/GaAs Radiation Hardened Photodiodes", Proc. SPIE 0540, Southwest Conf on Optics '85, (20 November 1985); https://doi.org/10.1117/12.976109
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KEYWORDS
Photodiodes

Silicon

Gallium arsenide

Heterojunctions

Active optics

Absorption

Radiation effects

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