Investigation of several materials as buffer layer candidates of EUVL mask

Dongwan Kim; Yuusuke Tanaka; Hiromasa Yamanashi; Iwao Nishiyama

doi:10.1117/12.557770

20 August 2004 Investigation of several materials as buffer layer candidates of EUVL mask

Dongwan Kim, Yuusuke Tanaka, Hiromasa Yamanashi, Iwao Nishiyama

Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557770
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan

Abstract

An EUVL mask consists of a multilayer, a capping layer, a buffer layer, and an absorber layer formed on a glass substrate with a low coefficient of thermal expansion. The buffer layer protects the multilayer during the repair of absorber defects. In this study, Ru, Cr, and CrN were investigated as buffer layer candidates, and their etching selectivity with respect to a TaGeN absorber, DUV defect inspection contrast, and film stress were compared. Ru was found to be the most promising material of the three.

Citation Download Citation

Dongwan Kim, Yuusuke Tanaka, Hiromasa Yamanashi, and Iwao Nishiyama "Investigation of several materials as buffer layer candidates of EUVL mask", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557770

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