Fabrication and performance of 1.3-µm vertical-cavity surface-emitting lasers with InGaAs quantum well active regions grown on GaAs substrates

Rickard Marcks von Wurtemberg; Petrus Sundgren; Jesper Berggren; Mattias Hammar; Marco Ghisoni; Vilhelm Oscarsson; Elsy Odling; Jessica Malmquist

doi:10.1117/12.547272

8 September 2004 Fabrication and performance of 1.3-μm vertical-cavity surface-emitting lasers with InGaAs quantum well active regions grown on GaAs substrates

Rickard Marcks von Wurtemberg, Petrus Sundgren, Jesper Berggren, Mattias Hammar, Marco Ghisoni, Vilhelm Oscarsson, Elsy Odling, Jessica Malmquist

Author Affiliations +

Proceedings Volume 5453, Micro-Optics, VCSELs, and Photonic Interconnects; (2004) https://doi.org/10.1117/12.547272
Event: Photonics Europe, 2004, Strasbourg, France

Abstract

We describe the development of long-wavelength InGaAs/GaAs vertical-cavity surface emitting lasers (VCSELs). Using highly strained double-quantum wells (DQWs) in combination with negative gain-cavity detuning we have been able to realise such VCSELs with emission wavelength up to 1300 nm. High-performance device characteristics include mW-range output power, mA-range threshold currents, 10 Gbit/s data transmission and very good temperature stability with continuous-wave operation up to at least 140°C. Singlemode emission is realised using an integrated mode filter consisting of a patterned silicon layer on the out-coupling mirror surface, yielding output power and threshold currents for 1270-nm devices of 1.2 - 0.5 mW and 2.3 - 0.6 mA, respectively, over a temperature interval of 10 - 140°C. Multimode devices have been found to deliver more than 2 mW at 1290 nm. Preliminary lifetime measurements do not reveal any intrinsic reliability problems related to the highly strained quantum wells.

Citation Download Citation

Rickard Marcks von Wurtemberg, Petrus Sundgren, Jesper Berggren, Mattias Hammar, Marco Ghisoni, Vilhelm Oscarsson, Elsy Odling, and Jessica Malmquist "Fabrication and performance of 1.3-μm vertical-cavity surface-emitting lasers with InGaAs quantum well active regions grown on GaAs substrates", Proc. SPIE 5453, Micro-Optics, VCSELs, and Photonic Interconnects, (8 September 2004); https://doi.org/10.1117/12.547272

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