Cross-correlation measurements in searching for a trace of the gate voltage noise in a JFET

Sumihisa Hashiguchi; Shinsuke Hosono; Makoto Ohki; Munecazu Tacano; Josef Sikula

doi:10.1117/12.545328

25 May 2004 Cross-correlation measurements in searching for a trace of the gate voltage noise in a JFET

Sumihisa Hashiguchi, Shinsuke Hosono, Makoto Ohki, Munecazu Tacano, Josef Sikula

Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.545328
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

The trace of the gate noise voltage was successfully caught by the measurements of the correlation between the noise outputs of a pair of JFETs connected to a common gate resistor. It is shown for 2SK150 (n-channel junction FET) that the gate noise voltage is 1/f-type and its level is -142dbV²/Hz at 1Hz, and that the correlation coefficient between the gate noise voltage and the gate noise current is -1.

Citation Download Citation

Sumihisa Hashiguchi, Shinsuke Hosono, Makoto Ohki, Munecazu Tacano, and Josef Sikula "Cross-correlation measurements in searching for a trace of the gate voltage noise in a JFET", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.545328

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available