Paper
4 November 2004 Bottom-emitting flip-chip VCSEL structure with reduced constraints on modulation response
Author Affiliations +
Abstract
Intrinsic and extrinsic limitations on conventional top-emitting high-speed VCSEL modulation bandwidth are discussed. A new VCSEL structure has been designed with reduced constraints on modulation bandwidth. The structure simultaneously addresses the primary extrinsic factors that limit the VCSEL modulation bandwidth. The new bottom-emitting, flip-chipped VCSEL structure improves heat-sinking, current injection uniformity, and reduces parasitic capacitance. We estimate the ultimate bandwidth of this new structure to be as high as 40Gb/s.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ahmad N. Al-Omari, Stewart A. Feld, and Kevin L. Lear "Bottom-emitting flip-chip VCSEL structure with reduced constraints on modulation response", Proc. SPIE 5556, Photonic Devices and Algorithms for Computing VI, (4 November 2004); https://doi.org/10.1117/12.558041
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KEYWORDS
Vertical cavity surface emitting lasers

Modulation

Oxides

Capacitance

Resistance

Optical interconnects

Semiconductor lasers

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