Paper
6 December 2004 Chemical characteristics of negative-tone chemically amplified resist for advanced mask making: II
Kazumasa Takeshi, Masahito Tanabe, Daisuke Inokuchi, Yuichi Fukushima, Yasuhiro Okumoto, Yoshimitsu Okuda
Author Affiliations +
Abstract
We investigated the film property and the lithographic performance of five commercialized NCARs. This report focused on Cr effect and PCD stability which are critical issues on advanced mask making. Results confirmed to solve the Cr effect by controlled dissolution rate of resist film. Furthermore, PCD was occurred by PAG moving and unsuitable reaction in the resist film standing delay time. This report suggests the strategy that was design of chemical structure for the next generation NCARs.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazumasa Takeshi, Masahito Tanabe, Daisuke Inokuchi, Yuichi Fukushima, Yasuhiro Okumoto, and Yoshimitsu Okuda "Chemical characteristics of negative-tone chemically amplified resist for advanced mask making: II", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.569516
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KEYWORDS
Polymers

Chromium

Chemically amplified resists

Lithography

Mask making

Coating

Chemical analysis

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