Microcosmic condition and macroscopically controlled method of nonlinear mode of GaAs photoconductive switch

Wei Shi; Lei Hou; Huiying Dai; Mengxia Li

doi:10.1117/12.577809

17 January 2005 Microcosmic condition and macroscopically controlled method of nonlinear mode of GaAs photoconductive switch

Wei Shi, Lei Hou, Huiying Dai, Mengxia Li

Author Affiliations +

Proceedings Volume 5644, Optoelectronic Devices and Integration; (2005) https://doi.org/10.1117/12.577809
Event: Photonics Asia, 2004, Beijing, China

Abstract

GaAs PCSS's can work under linear and nonlinear modes. When the PCSS's work at the field below 3.5 kV/cm, current pulse string and corresponding light pulse string have the same rise time and pulse width. The resistance of PCSS's recovers, as soon as the light pulse disappears. When the electrical field is larger than 4.3 kV/cm, the light energy is greater than 0.46 mJ, GaAs-PCSS's work at nonlinear mode, which also is called high gain mode or lock-on effect. By calculation, Gunn domains come into being in GaAs in lock-on effect, and the high-gain mechanism is explained by optically activated charge domain model. So the microcosmic conditions of lock-on have been found. The requirement on the triggering laser energy is essential to meet the requirement of Gunn-domain formation by generating enough carriers. The requirement on the electrical field threshold is borne on the requirement of NDR threshold (Gunn threshold), which ranges from 3.2 kV/cm to 4 kV/cm for GaAs. In our experiments, the electric field threshold of high-gain mode is from 4.1 kV/cm to 11 kV/cm, which is higher than NDR threshold of GaAs. We can reduce the electrical field down to Gunn threshold by designing the external circuit. In this paper, two circuits are introduced which is designed by Sandia National Laboratories, and can be used to induce fast recovery from lock-on.

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Wei Shi, Lei Hou, Huiying Dai, and Mengxia Li "Microcosmic condition and macroscopically controlled method of nonlinear mode of GaAs photoconductive switch", Proc. SPIE 5644, Optoelectronic Devices and Integration, (17 January 2005); https://doi.org/10.1117/12.577809

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KEYWORDS

Gallium arsenide

Switches

Electrons

Laser energy

Nonlinear control

Pulsed laser operation

Resistance

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