Paper
21 February 2005 High-spatial-resolution studies of UV-laser-damage morphology in SiO2 thin films with artificial defects
Semyon Papernov, Ansgar W. Schmid
Author Affiliations +
Abstract
Atomic force microscopy was employed to investigate the morphology of UV, nanosecond-pulsed-laser damage in SiO2 thin films. Gold nanoparticles, 18.5 nm in diameter and embedded in the film, were used as calibrated absorbing defects. Damage-crater diameter, depth, volume, and cross-sectional profiles were measured as a function of laser fluence and the lodging depth of gold nanoparticles. The results indicate that at laser fluences close to the crater-formation threshold and a lodging depth of a few particle diameters, the dominating regime of the material removal is melting and evaporation. The morphology of craters initiated by deep absorbing defects, with a lodging depth larger than ~10 particle diameters, clearly points to the dominating role of a shock-wave-induced material-removal mechanism. Crater-diameter variation with lodging depth and laser fluence is compared with theoretical predictions.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Semyon Papernov and Ansgar W. Schmid "High-spatial-resolution studies of UV-laser-damage morphology in SiO2 thin films with artificial defects", Proc. SPIE 5647, Laser-Induced Damage in Optical Materials: 2004, (21 February 2005); https://doi.org/10.1117/12.584899
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Particles

Thin films

Atomic force microscopy

Gold

Laser damage threshold

Plasma

Nanoparticles

Back to Top