Characterization of thin films and stack in MOEMS structure with ellipsometry and reflectometry techniques

Lianchao Sun; Ping Hou

doi:10.1117/12.590309

22 January 2005 Characterization of thin films and stack in MOEMS structure with ellipsometry and reflectometry techniques

Lianchao Sun, Ping Hou

Author Affiliations +

Proceedings Volume 5715, Micromachining and Microfabrication Process Technology X; (2005) https://doi.org/10.1117/12.590309
Event: MOEMS-MEMS Micro and Nanofabrication, 2005, San Jose, California, United States

Abstract

Nondestructive characterization on thin films and their stack in MOEMS device is highly desirable. But, it is often a challenging task because the area is usually small. During processing of thin films, the deposition rates, optical properties, and mechanical properties must be fully understood to fabricate a device with desired performance. With the patterned surface, deposition rate of a typical physical vapor deposition (PVD) technique, such as electron-beam evaporation and sputtering, varies at different location due to shadow effect. In this study, spectroscopic ellipsometry and reflectometry were used to characterize the optical properties of electron-evaporation thin films on a flat substrate. On the other hand, microreflectometer was used to monitor the spectrum of deposited multi-stack of optical thin films inside via-holes. Combination of these two techniques provides a practical way to qualify the processing and ensure the device performance.

Citation Download Citation

Lianchao Sun and Ping Hou "Characterization of thin films and stack in MOEMS structure with ellipsometry and reflectometry techniques", Proc. SPIE 5715, Micromachining and Microfabrication Process Technology X, (22 January 2005); https://doi.org/10.1117/12.590309

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