Growth and fabrication of AlGaInN-based UV-LEDs using SiN nano-mask technique

Y. Naoi; H. Sato; H. Yamamoto; K. Ono; A. Nakamura; M. Kimura; S. Nouda; S. Sakai

doi:10.1117/12.601958

28 April 2005 Growth and fabrication of AlGaInN-based UV-LEDs using SiN nano-mask technique (Invited Paper)

Y. Naoi, H. Sato, H. Yamamoto, K. Ono, A. Nakamura, M. Kimura, S. Nouda, S. Sakai

Proceedings Volume 5722, Physics and Simulation of Optoelectronic Devices XIII; (2005) https://doi.org/10.1117/12.601958
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

370nm AlGaInN-based light emitting diodes (LEDs) with SiN in the active layer, fabricated on sapphire substrates by one-time metal organic chemical vapor deposition (MOCVD) have been investigated. Atomic force microscopy and cathodoluminesence results indicated that SiN nano-mask was formed in the active layer, and the degree of compositional indium fluctuation in the active layer of UV-LEDs was enhanced. By using this technique, the output power of the LEDs was improved about 1.3 times than that of the same structure without SiN in the active layer.

Citation Download Citation

Y. Naoi, H. Sato, H. Yamamoto, K. Ono, A. Nakamura, M. Kimura, S. Nouda, and S. Sakai "Growth and fabrication of AlGaInN-based UV-LEDs using SiN nano-mask technique (Invited Paper)", Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); https://doi.org/10.1117/12.601958

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