Yeonjoon Park,1 Alexander Grichener,2 Jacob Jensen,3 Sang H. Choi4
1Science and Technology Corp. (United States) 2Univ. of Michigan (United States) 3Governor's School of Science and Technology (United States) 4NASA Langley Research Ctr. (United States)
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We studied various electrical and optical properties of Europium (1 atomic %) incorporated BaTiO3 film on n-Si(100) substrate. The thin film structure was analyzed by X-ray diffraction. Film thickness and optical refractive index were measured with an ellipsometer. P-E hysteresis measurement shows the remnant polarization of 37 micro-C/cm2 in BaTiO3:Eu film. C-V measurements on the pure BaTiO3 film show recovery of capacitance across sweeping voltage ranges with a narrow transition zone due to the polarization change. On the other hand, C-V and I-V measurements on the BaTiO3:Eu film show that Europium incorporation increases positively charged states in the BaTiO3 layer such that BaTiO3:Eu/n-Si interface behaves like a leaky p-n junction.
Yeonjoon Park,Alexander Grichener,Jacob Jensen, andSang H. Choi
"Electrical and optical property of ferroelectric BaTiO3:Eu", Proc. SPIE 5728, Integrated Optics: Devices, Materials, and Technologies IX, (31 March 2005); https://doi.org/10.1117/12.590364
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Yeonjoon Park, Alexander Grichener, Jacob Jensen, Sang H. Choi, "Electrical and optical property of ferroelectric BaTiO3:Eu," Proc. SPIE 5728, Integrated Optics: Devices, Materials, and Technologies IX, (31 March 2005); https://doi.org/10.1117/12.590364