Paper
25 March 2005 Fabrication and characterization of carbon nanotube FETs
Takashi Mizutani, Yutaka Ohno
Author Affiliations +
Abstract
We have fabricated carbon nanotube (CNT) FETs using position-controlled growth technique. The CNT-FETs showed p-type conduction. The chirality of the CNT FET channel was determined by using microphotocurrent spectroscopy. Novel peapods FETs with fullerenes inserted in the CNTs were also fabricated. They showed ambipolar I-V characteristics with both n- and p-type conductions depending on the gate voltage. The ambipolar behavior was explained based on the Schottky-barrier-controlled transistor model, where the transistor action occurs primarily by changing the Schottky contact resistance by the gate voltage. It has been shown that the bandgap of the peapod FETs was dependent on what kind of fullerene was inserted in the CNT channel. We have also demonstrated that it was possible to control the conduction type of the FET channel by choosing contact metal with different work function without any doping in the CNT channel.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Mizutani and Yutaka Ohno "Fabrication and characterization of carbon nanotube FETs", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); https://doi.org/10.1117/12.580040
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CITATIONS
Cited by 1 scholarly publication and 6 patents.
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KEYWORDS
Field effect transistors

Single walled carbon nanotubes

Electrodes

Metals

Fullerenes

Transistors

Semiconductors

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