Cross sectional measurements of dense high aspect ratio patterns using CD-SAXS

Ronald L. Jones; Eric K. Lin; Wen-li Wu; Steven J. Weigand; Denis T. Keane; John M. Quintana

doi:10.1117/12.600290

10 May 2005 Cross sectional measurements of dense high aspect ratio patterns using CD-SAXS

Ronald L. Jones, Eric K. Lin, Wen-li Wu, Steven J. Weigand, Denis T. Keane, John M. Quintana

Proceedings Volume 5752, Metrology, Inspection, and Process Control for Microlithography XIX; (2005) https://doi.org/10.1117/12.600290
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

Developing non-destructive, high precision characterization methods of pattern cross section is critical to the maturation of sub-65 nm technologies. In this study, Criticial Dimension Small Angle X-ray Scattering (CD-SAXS) data are used to non-destructively characterize the dimensions of dense, high aspect ratio patterns with sub-nm precision. Data are presented for a series of photoresist patterns with varying degrees of footer and sidewall angle. The scattering intensity, I, is measured as a function of the scattering vector, q, and the sample rotation angle, w. The resulting data are transformed to an effective Qx-Qz plane, representing the Fourier transform of the average pattern cross section. From this data, complex features of cross sectional shape can in principle be obtained through systematic analysis of appropriate intensity slices. Here, we demonstrate the protocol for high precision measurements using CD-SAXS. Data are analyzed to extract average values of pitch, line width, line height, sidewall angle, and the size of a foot or undercut. In addition, the ability of the technique to analyze more complex features, such as lines with curved sidewalls and corner rounding, is discussed. The CD-SAXS technique is found to provide dimensions with sub-nm precision and sidewall angles with sub-degree precision in a non-destructive manner, providing an option for characterization of next generation microelectronic and nanofabricated structures.

Citation Download Citation

Ronald L. Jones, Eric K. Lin, Wen-li Wu, Steven J. Weigand, Denis T. Keane, and John M. Quintana "Cross sectional measurements of dense high aspect ratio patterns using CD-SAXS", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); https://doi.org/10.1117/12.600290

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available