Paper
10 May 2005 From CD to 3D sidewall roughness analysis with 3D CD-AFM
Author Affiliations +
Abstract
The continuous shrink of device's dimensions has reached such level that parameters such as line edge and line width roughness (LER and LWR) become non negligible for advance process development. Therefore, it is now mandatory to work with 3D metrology techniques in order to fulfil roadmap requirements. The goal of this paper is to show the potentiality of the CD-AFM as a real predictable 3D metrology in order to accelerate advance devices development by understanding and solving the strong limitations at a certain point of each technological steps (lithography, front-end etching...). Line edge and line width roughness are part of this future 3D metrology.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Johann Foucher "From CD to 3D sidewall roughness analysis with 3D CD-AFM", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); https://doi.org/10.1117/12.599229
Lens.org Logo
CITATIONS
Cited by 22 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Line edge roughness

Line width roughness

3D metrology

Semiconducting wafers

Edge roughness

Etching

Fourier transforms

RELATED CONTENT


Back to Top