Paper
10 May 2005 Performance of measuring contact holes using the Opti-Probe 7341 3-D RT/CD technology
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Abstract
Spectra of contact hole arrays with target diameters ranging from 106 to 131 nm and pattern pitch ranging from 220 to 300 nm are taken from an off-axis (65°) rotating compensator spectroscopic ellipsometry (RCSE).[1] 3-dimensional finite difference (FD3D) model developed by H. Chu,[2] is applied in the studies. To ensure accuracy of optical dispersion of each film, the simultaneous use of angle resolved beam profile reflectometry (BPR), broadband spectroscopic reflectometry (BB), and SE of an Opti-Probe 7341 are used for characterizing of the resist and BARC films. In particular, The extracted n&k dispersions are used to model the contact hole SE data using Therma-Wave's proprietary 3-dimensional RT/CD technology.[3,4] The performance of stability of both static and dynamic repeatability, uniformity, and correlation to other independent technology (i.e., SEM) will be presented in this paper.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Osman Sorkhabi, Heath Pois, Hanyou Chu, Youxian Wen, Jon Opsal, and Won D. Kim "Performance of measuring contact holes using the Opti-Probe 7341 3-D RT/CD technology", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); https://doi.org/10.1117/12.598955
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KEYWORDS
Semiconducting wafers

Critical dimension metrology

Process control

Metrology

Inspection

Data modeling

Lithography

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