Paper
10 May 2005 Standing wave reduction of positive and negative I-line resists
A. G. Grandpierre, R. Schiwon, F. Finger, U. P. Schroder
Author Affiliations +
Abstract
Implantation layers may require smaller resist thickness as chip dimensions decrease. When reducing the thickness below 800 nm, while keeping all other track and exposure settings the same, standing waves in positive and negative I-line resists become more prominent. Bottom antireflective coating helps reducing the amplitude of the waves, but additional efforst, like BARC open RIE steps, or more coater units on the track, will increase the cost of ownership significantly. One may also consider changing the bake settings, which play a critical role in the formation of standing waves. The standard settings used for mid UV resists are 90 deg post apply bake (PAB) and 110 deg post exposure bake (PEB). Although resist suppliers recommend staying within this temperature range, we have used settings outside the range, as part of testing for possible profile ameliorations. Optimized settings for both tones were achieved with a different combination of the two bakes. The overall performances of the tested samples with optimized settings were satisfying in terms of CD range, stability and process window.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. G. Grandpierre, R. Schiwon, F. Finger, and U. P. Schroder "Standing wave reduction of positive and negative I-line resists", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); https://doi.org/10.1117/12.596508
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Coating

Lithography

Bottom antireflective coatings

Doping

Reactive ion etching

Reticles

Semiconducting wafers

RELATED CONTENT

Critical dimension control on I-line steppers
Proceedings of SPIE (May 10 2005)
In the year 2525, if x ray is still alive,...
Proceedings of SPIE (December 18 1998)
CDU minimization at the 45 nm node and beyond ...
Proceedings of SPIE (March 27 2007)
Characterization of advanced DUV photoresists
Proceedings of SPIE (June 11 1999)
Improvement of gate CD uniformity for 55 nm node logic...
Proceedings of SPIE (March 22 2008)

Back to Top