Structural and electrical properties of Nd- and V-modified bismuth titanate thin films by sol-gel processing

Jinrong Cheng; Liang He; Zhongyan Meng

doi:10.1117/12.608048

8 December 2004 Structural and electrical properties of Nd- and V-modified bismuth titanate thin films by sol-gel processing

Jinrong Cheng, Liang He, Zhongyan Meng

Author Affiliations +

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608048
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

In this paper, Nd- and V- modified Bi_3.15Nd_0.85Ti₃O₁₂ (BNT), Bi_3.15Nd_0.85Ti_2.97V_0.03O₁₂ (BNTV) and Bi₄Ti₃O₁₂ (BIT) thin films were prepared on platinized silicon substrates by a using sol-gel processing. X-ray diffraction (XRD) analysis revealed that a single-phase BIT-type structure with (00l) preferred orientation was obtained for BNT and BNTV thin films annealed at 700 °C for 2 hours. Scanning Electric Microscopy (SEM) images showed that BNT and BNTV thin films had round and rod like grains, with the size of around 200-400 nm. BNT and BNTV thin films revealed improved dielectric and ferroelectric properties relative to BIT thin films. For the 1.12 µm thick BNT thin films, the dielectric constant achieves 428 at 1kHz, the remnant polarization and coercive field are of 17 µC/cm² and 100 kV/cm, respectively. BNT thin films remained excellent electrical strength under the field as high as 600 kV/cm.

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Jinrong Cheng, Liang He, and Zhongyan Meng "Structural and electrical properties of Nd- and V-modified bismuth titanate thin films by sol-gel processing", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.608048

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