Paper
3 June 2005 Packaging technology for high power blue-green LEDs
Mahbub Akhter, Pleun Maaskant, Declan Casey, James Rohan, Nicolas Cordero, Brian Corbett
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Abstract
High brightness LEDs (HBLEDs) have been fabricated on GaN semiconductor material grown on sapphire substrate. These devices provide an optical output power in excess of 50 mW at a driving current of 1 amp. For this high current application, large size (1.8 mm × 0.6 mm) GaN LEDs are flip-chip mounted onto a heat sink to provide a low thermal resistance path from the junction to the ambient. For the flip-chip mounting, a Au/Sn/Au solder and a Au/Au thermal compression bonding process have been optimized. The bond strength of the Au/Sn solder joints and the Au-Au bonds is measured through shear testing. Good bond strength results of 224 g/f for the Au/Sn/Au solder and 288 g/f for the solid Au bonds have been achieved. The thermal modeling of the assembly is done with a finite element analysis and the optimum design has been adopted for this high current application. At present these assemblies are under lifetime test and so far nearly 6000 hours of continuous operation has been achieved.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mahbub Akhter, Pleun Maaskant, Declan Casey, James Rohan, Nicolas Cordero, and Brian Corbett "Packaging technology for high power blue-green LEDs", Proc. SPIE 5825, Opto-Ireland 2005: Optoelectronics, Photonic Devices, and Optical Networks, (3 June 2005); https://doi.org/10.1117/12.605829
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KEYWORDS
Light emitting diodes

Gold

Metals

Optical fabrication

Sapphire

Copper

Resistance

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