Paper
30 June 2005 A fully integrated low-noise amplifier in SiGe 0.35 μm technology for 802.11a WIFI applications
Author Affiliations +
Proceedings Volume 5837, VLSI Circuits and Systems II; (2005) https://doi.org/10.1117/12.608508
Event: Microtechnologies for the New Millennium 2005, 2005, Sevilla, Spain
Abstract
In the last years, WIFI market has shown an incredible growth, exceeding expectations. This paper presents the design of two fully integrated LNAs using a low cost SiGe 0.35 um technology for the 5 GHz band, according to the IEEE 802.11a WIFI standard. One LNA has an asymmetric configuration and the other a balanced configuration. A comparison between the two LNAs has been made. All passives devices are on chip, including integrated inductors which have been designed by electromagnetic simulations. This work demonstrates the feasibility of a low cost silicon technology for the design of 5 GHz band circuits
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Pulido, S. L. Khemchandani, A. Goni-Iturri, R. Diaz, A. Hernandez, and J. del Pino "A fully integrated low-noise amplifier in SiGe 0.35 μm technology for 802.11a WIFI applications", Proc. SPIE 5837, VLSI Circuits and Systems II, (30 June 2005); https://doi.org/10.1117/12.608508
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KEYWORDS
Standards development

Amplifiers

Metals

Polarization

Silicon

Electromagnetic simulation

Orthogonal frequency division multiplexing

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