Studying the dependence of low-frequency noise on geometrical shape of Al-based thin film interconnects

Kuldeep S. Rawat; Gholam H. Massiha; Jayanta Choudhury

doi:10.1117/12.609338

23 May 2005 Studying the dependence of low-frequency noise on geometrical shape of Al-based thin film interconnects

Kuldeep S. Rawat, Gholam H. Massiha, Jayanta Choudhury

Proceedings Volume 5844, Noise in Devices and Circuits III; (2005) https://doi.org/10.1117/12.609338
Event: SPIE Third International Symposium on Fluctuations and Noise, 2005, Austin, Texas, United States

Abstract

In this paper the experimental results of a study conducted to investigate dependence of low-frequency noise on the geometrical shape of VLSI interconnect are discussed. The metal thin films are most commonly used in fabrication of these metallic interconnects. The interconnection lines of modern ICs have effective cross sections in the range of 1-5 square μm. Therefore, the operating currents of a few milliamps results in current densities in the range of MA/square cm. Under these conditions, the phenomenon of electromigration arises, which may lead to the failure of the interconnection lines in a time ranging from a few several hours to several years, depending on the subjected current density J and thermal stress T. To study the effect of subjected current densities and temperatures, low-frequency noise measurements were performed on a group of ten metal thin film VLSI interconnects. These measurements were carried out under stressing current densities between 1.0x10⁵ A/cm² and 2.2 x10⁶ A/cm² at different heating temperatures up to 280 ^° C. We used a sophisticated noise measurement system based on dual-channel dynamic signal analyzer and ultra low-noise amplifier to monitor and capture the noise spectra exhibited by the samples when subjected to electrical and thermal stress. The low-frequency noise measurement system and measurement technique, metal thin film sample design, and the behavior of these samples under subjected stressing conditions are discussed in the paper.

Citation Download Citation

Kuldeep S. Rawat, Gholam H. Massiha, and Jayanta Choudhury "Studying the dependence of low-frequency noise on geometrical shape of Al-based thin film interconnects", Proc. SPIE 5844, Noise in Devices and Circuits III, (23 May 2005); https://doi.org/10.1117/12.609338

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Thin films

Metals

Interference (communication)

Very large scale integration

Resistance

Signal analyzers

Stereolithography

Show All Keywords

Keywords/Phrases

Search In:

Publication Years