Noise in piezoresistive Si pressure sensors

Bela Szentpali; Maria Adam; Tibor Mohacsy

doi:10.1117/12.609262

23 May 2005 Noise in piezoresistive Si pressure sensors (Invited Paper)

Bela Szentpali, Maria Adam, Tibor Mohacsy

Proceedings Volume 5846, Noise and Information in Nanoelectronics, Sensors, and Standards III; (2005) https://doi.org/10.1117/12.609262
Event: SPIE Third International Symposium on Fluctuations and Noise, 2005, Austin, Texas, United States

Abstract

The principles of the construction of piezoresistive silicone pressure sensors are outlined. The fabrication of sensors with ion-implantation and common silicone wafer technology is described. The simulation of the devices showed that the membrane thickness has a major influence on the sensitivity, while the misalignment is less important. The low-frequency noise spectra of the piezoresistive elements are Lorenzian; the characteristic time constant is about 23 μs. The bias dependence of the spectra is in some degree less than it was expected from the regular V2 scaling. The plateau of the noise spectrum at working conditions is higher with almost 30 dB than the thermal noise. This excess noise is attributed to a trap level; however the origin of this G-R center is not clear yet. The figures of merits of the sensor were also estimated in numerical examples.

Citation Download Citation

Bela Szentpali, Maria Adam, and Tibor Mohacsy "Noise in piezoresistive Si pressure sensors (Invited Paper)", Proc. SPIE 5846, Noise and Information in Nanoelectronics, Sensors, and Standards III, (23 May 2005); https://doi.org/10.1117/12.609262

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