A novel method to increase quantum efficiency of the monolithically integrated PIN/HBT-receiver

Hailin Cui; Shouli Zhou; Hui Huang; Yongqing Huang; Xiaomin Ren

doi:10.1117/12.636315

2 December 2005 A novel method to increase quantum efficiency of the monolithically integrated PIN/HBT-receiver

Hailin Cui, Shouli Zhou, Hui Huang, Yongqing Huang, Xiaomin Ren

Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 602025 (2005) https://doi.org/10.1117/12.636315
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China

Abstract

Adding resonant cavity to increase quantum efficiency of the monolithically integrated PIN/HBT-Receiver is described. Between the InP buffer and device epitaxial structure, InP/InGaAsP quarter wavelength stack (QWS) are used to form DBR (Distributed Bragg Reflectors) mirror. The PIN-PD is integrated within a Fabry-Perot cavity and the incident light is reflected many times by the Fabry-Perot cavity and consequently absorbed many times by the absorption layer. Therefore, the quantum efficiency of this detector is enlarged, meanwhile other performances such as frequency response are not influenced. We discuss the method to fabricate the resonance cavity, make theory simulation, optimize design on it, and analyze the advantage of this device.

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Hailin Cui, Shouli Zhou, Hui Huang, Yongqing Huang, and Xiaomin Ren "A novel method to increase quantum efficiency of the monolithically integrated PIN/HBT-receiver", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 602025 (2 December 2005); https://doi.org/10.1117/12.636315

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KEYWORDS

Quantum efficiency

Absorption

Mirrors

Reflectivity

Sensors

Signal to noise ratio

Interfaces

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