Relative intensity noise of an injected semiconductor laser

J. Poette; O. Vaudel; P. Besnard

doi:10.1117/12.660527

9 June 2006 Relative intensity noise of an injected semiconductor laser

J. Poette, O. Vaudel, P. Besnard

Proceedings Volume 6054, International Conference on Lasers, Applications, and Technologies 2005: Advanced Lasers and Systems; 605407 (2006) https://doi.org/10.1117/12.660527
Event: International Conference on Lasers, Applications, and Technologies 2005, 2005, St. Petersburg, Russian Federation

Abstract

A study of the Relative Intensity Noise (RIN) of an optically injected semiconductor laser is presented versus the injected power. The seeded laser is then operating from an amplifying regime towards a locking one, at the same wavelength than that of the master one. It is shown that when the Master is more coherent than the slave, a reduction of the RIN of the slave is progressively observed along with an increase of the injected power. In the converse case, no significant modification of the RIN is experimentally observed.

Citation Download Citation

J. Poette, O. Vaudel, and P. Besnard "Relative intensity noise of an injected semiconductor laser", Proc. SPIE 6054, International Conference on Lasers, Applications, and Technologies 2005: Advanced Lasers and Systems, 605407 (9 June 2006); https://doi.org/10.1117/12.660527

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