Paper
7 July 1986 Large Area Laser-Assisted Etching of Electronic Materials
Peter D. Brewer, R. M. Osgood Jr.
Author Affiliations +
Proceedings Volume 0611, Laser Processing of Semiconductors & Hybrids; (1986) https://doi.org/10.1117/12.956412
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States
Abstract
The use of laser assisted-chemistry for dry etching of electronic materials is described. Emphasis is placed on the use of laser-assisted reactions for large area processing. Review of the current technology is given for large area masked etching, UV-projection etching, and laser assisted reactive ion etching (RIE), and plasma etching.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter D. Brewer and R. M. Osgood Jr. "Large Area Laser-Assisted Etching of Electronic Materials", Proc. SPIE 0611, Laser Processing of Semiconductors & Hybrids, (7 July 1986); https://doi.org/10.1117/12.956412
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications and 3 patents.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Etching

Laser processing

Gallium arsenide

Semiconductor lasers

Silicon

Excimer lasers

Semiconductors

Back to Top