Paper
28 February 2006 Exciton dephasing in strain-compensated self-assembled InAs quantum dots
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Abstract
We investigate the dephasing of excitons in InAs self-assembled quantum dots by using a transient four-wave-mixing technique. A used sample is specially designed to compensate the strain. We observe long-lived coherence of excitons at 5 K which corresponds to the dephasing time longer than a nanosecond, where the photon energy of the excitation pulse is 0.874~eV. We find that a pure dephasing due to exciton-phonon interactions dominates in the exciton dephasing rather than the population decay and the exciton-exciton interaction in the weak excitation region, by analyzing the population lifetime and the polarization-dependent dephasing time.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Junko Ishi-Hayase, Kouichi Akahane, Naokatsu Yamamoto, Mamiko Kujiraoka, Kazuhiro Ema, and Masahide Sasaki "Exciton dephasing in strain-compensated self-assembled InAs quantum dots", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61151O (28 February 2006); https://doi.org/10.1117/12.661300
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KEYWORDS
Excitons

Indium arsenide

Quantum dots

Picosecond phenomena

Polarization

Gallium arsenide

Anisotropy

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