Paper
15 February 2006 Sub-picosecond exciton spin-relaxation in GaN
Atsushi Tackeuchi, Takamasa Kuroda, Hirotaka Otake, Kazuyoshi Taniguchi, Takako Chinone, Ji-Hao Liang, Masataka Kajikawa, Naochika Horio
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Abstract
Exciton spin relaxations in bulk GaN were directly observed with sub-picosecond's time resolution. The obtained spin relaxation times of A-band free exciton are 0.47 ps - 0.25 ps at 150 K - 225 K. The spin relaxation time of the acceptor bound exciton at 15K is measured to be 1.1 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time of A-band free exciton is found to be proportional to T -1.4, where T is the temperature. The fact that the spin relaxation time in GaN is shorter than that in GaAs, in spite of the small spin-orbit splitting, suggests that the spin relaxation is dominated by the defect-assisted Elliot-Yafet process.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Atsushi Tackeuchi, Takamasa Kuroda, Hirotaka Otake, Kazuyoshi Taniguchi, Takako Chinone, Ji-Hao Liang, Masataka Kajikawa, and Naochika Horio "Sub-picosecond exciton spin-relaxation in GaN", Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 611803 (15 February 2006); https://doi.org/10.1117/12.640263
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KEYWORDS
Gallium nitride

Excitons

Picosecond phenomena

Finite element methods

Spin polarization

Gallium arsenide

Ultrafast phenomena

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