Rare earths vs. rare earths: spectral storage in f-d and f-f materials

Alan E. Craig

doi:10.1117/12.663658

21 March 2006 Rare earths vs. rare earths: spectral storage in f-d and f-f materials

Alan E. Craig

Proceedings Volume 6130, Advanced Optical and Quantum Memories and Computing III; 61300H (2006) https://doi.org/10.1117/12.663658
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Analysis of a spectral hole burning memory design implementing high oscillator strength absorbers is reported. While retaining excellent area bit density, potential I/O bandwidth is significantly enhanced while required optical power and energy decrease. Model parameter values that derive from materials recently fabricated and characterized by collaborators indicate excellent data storage system performance.

Citation Download Citation

Alan E. Craig "Rare earths vs. rare earths: spectral storage in f-d and f-f materials", Proc. SPIE 6130, Advanced Optical and Quantum Memories and Computing III, 61300H (21 March 2006); https://doi.org/10.1117/12.663658

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