Paper
24 March 2006 Lithography rework reduction and improved process control using AIM targets on aluminum layers in the high-volume production of 110-nm DRAM devices
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Abstract
AIM grating targets were optimized and implemented on the metal 2 Aluminum layer in high volume production of 110-nm DRAM devices. Grating target structures are intrinsically more compatible with Aluminum process design rules, allowing overlay target optimization to better fit the process and better cope with the large grain structure of the Aluminum layer. With the implementation of AIM overlay targets we were able to achieve tighter control of the Aluminum patterning, we also achieved smaller overlay residuals, better matching between post litho and post etch measurements, better modeling and less rework. Above all, AIM targets improve the overlay metrology tool capability and provide a better tool-to-tool matching performance.
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Detlef Hofmann, Frank Rabe, Yosef Avrahamov, and Christian Sparka "Lithography rework reduction and improved process control using AIM targets on aluminum layers in the high-volume production of 110-nm DRAM devices", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61522B (24 March 2006); https://doi.org/10.1117/12.653360
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KEYWORDS
Aluminum

Overlay metrology

Process control

Etching

Semiconducting wafers

Data modeling

Lithography

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