Modeling and characterization of a smart two-direction MOSFET magnetic sensor

Ali Abou-Elnour

doi:10.1117/12.639154

27 March 2006 Modeling and characterization of a smart two-direction MOSFET magnetic sensor

Ali Abou-Elnour

Proceedings Volume 6166, Smart Structures and Materials 2006: Modeling, Signal Processing, and Control; 61660I (2006) https://doi.org/10.1117/12.639154
Event: SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, 2006, San Diego, California, United States

Abstract

D.C. and A. C. characteristics of a magnetic sensor, based on Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure, have been investigated using an efficient two-dimensional physical simulator. With the coupling scheme between the magnetic field equation and the carrier transport equations in the present simulator, the effects of the device geometric parameters, the bias conditions, and the magnetic field on the current deflection due to magnetic field and on the magnetic sensor relative sensitivity are accurately determined. The MOSFET magnetic sensor capability is further enhanced by using an integrated smart structure which is able to fully detect the magnetic field variations in two directions. The current deflection and relative sensitivity for the smart two-directions magnetic sensor under different operating conditions are finally investigated with the present efficient physical simulator.

Citation Download Citation

Ali Abou-Elnour "Modeling and characterization of a smart two-direction MOSFET magnetic sensor", Proc. SPIE 6166, Smart Structures and Materials 2006: Modeling, Signal Processing, and Control, 61660I (27 March 2006); https://doi.org/10.1117/12.639154

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