Amorphous Silicon Alloy Thin Film Transistor Operation With High Field Effect Mobility

M. Shur; C. Hyun; M. Hack; W. Czubatyj

doi:10.1117/12.961070

12 March 1986 Amorphous Silicon Alloy Thin Film Transistor Operation With High Field Effect Mobility

M. Shur, C. Hyun, M. Hack, W. Czubatyj

Proceedings Volume 0617, Amorphous Semiconductors for Microelectronics; (1986) https://doi.org/10.1117/12.961070
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

A new theory of a-Si Thin Film Transistor (TFT) operation is presented. In addition to the below and above threshold regimes described previously, it predicts two new regimes of operation which occur at very high densities of the induced charge in the a-Si TFT channel. Ina crystalline-like regime the free electron concentration exceeds the localized charge concentration at the a-Si-insulator interface. In a transitional regime (at lower densities of the induced charge) almost all localized states in the energy gap of amorphous silicon near the interface are filled. In the crystalline-like regime, the field-effect mobility is close to the band mobility and the operation of an a-Si TFT is truly similar to the operation of a crystalline field-effect transistor. Our estimates show that the gate voltage necessary to achieve the crystalline-like regime is about 50 V for an a-Si TFT with an insulator 1000 Å thick and a relative permittivity of approximately 3.9. Much lower threshold voltages (close to 8 volts or so) may be achieved by using a gate insulator with a higher dielectric constant.

Citation Download Citation

M. Shur, C. Hyun, M. Hack, and W. Czubatyj "Amorphous Silicon Alloy Thin Film Transistor Operation With High Field Effect Mobility", Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); https://doi.org/10.1117/12.961070

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