Enhancement of electron capture efficiency in MQW structures

Ivan M. Safonov; Mykhailo V. Klymenko; Igor A. Sukhoivanov

doi:10.1117/12.660923

14 April 2006 Enhancement of electron capture efficiency in MQW structures

Ivan M. Safonov, Mykhailo V. Klymenko, Igor A. Sukhoivanov

Proceedings Volume 6184, Semiconductor Lasers and Laser Dynamics II; 61841K (2006) https://doi.org/10.1117/12.660923
Event: SPIE Photonics Europe, 2006, Strasbourg, France

Abstract

In the paper, the problem of the effective enhancement of electron capture efficiency has been considered for MQW structures. Different approaches to the problem are used. The most effective one is based on embedding of additional layers in SQH region. We have investigated the influence of such layers on two types of carriers' capture. The first one is the capture of bound carriers from reservoir states in SQH region and the second one is the capture of free carriers from quasi-continuum states. As a result, we have obtained up to tenfold increase of electron capture efficiency.

Citation Download Citation

Ivan M. Safonov, Mykhailo V. Klymenko, and Igor A. Sukhoivanov "Enhancement of electron capture efficiency in MQW structures", Proc. SPIE 6184, Semiconductor Lasers and Laser Dynamics II, 61841K (14 April 2006); https://doi.org/10.1117/12.660923

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