Energy level alignment at C<sub>60</sub>/Hf using x-ray and ultraviolet photoelectron spectroscopy

C. Y. Kim; J. H. Seo; S. W. Cho; K. -H. Yoo; C. N. Whang; S. J. Kang

doi:10.1117/12.663489

20 April 2006 Energy level alignment at C₆₀/Hf using x-ray and ultraviolet photoelectron spectroscopy

C. Y. Kim, J. H. Seo, S. W. Cho, K. -H. Yoo, C. N. Whang, S. J. Kang

Proceedings Volume 6192, Organic Optoelectronics and Photonics II; 619228 (2006) https://doi.org/10.1117/12.663489
Event: SPIE Photonics Europe, 2006, Strasbourg, France

Abstract

We report the characterization of the interface formation of fullerene (C₆₀) on hafnium (Hf) using x-ray and ultraviolet photoelectron spectroscopy (XPS and UPS). The valence band, C 1s and Hf 4f spectra were measured during the deposition of C₆₀ on a clean Hf surface in a stepwise manner. After enough deposition of C₆₀ layers on Hf, XPS measurements indicate that there is no chemical reaction between C₆₀ on Hf, and band bending exists at the C₆₀/Hf interface. From UPS measurements, the energy level difference between Fermi level of Hf and the onset of the highest occupied molecular orbital of C₆₀ is 2.01 eV. The vacuum level of Hf was shifted toward low binding energy (0.95eV) as the C₆₀ deposition. These valence spectra results indicate that there exist an interface dipole and small electron injection barrier at the C₆₀/Hf interface. We provide the complete energy band diagram of the C₆₀/Hf interface and confirm that a small electron injection barrier can be achieved by inserting a low work function metal in a C₆₀ field-effect transistor.

Citation Download Citation

C. Y. Kim, J. H. Seo, S. W. Cho, K. -H. Yoo, C. N. Whang, and S. J. Kang "Energy level alignment at C₆₀/Hf using x-ray and ultraviolet photoelectron spectroscopy", Proc. SPIE 6192, Organic Optoelectronics and Photonics II, 619228 (20 April 2006); https://doi.org/10.1117/12.663489

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