Advances in high-brightness high-power semiconductor lasers

R. M. Lammert; S. W. Oh; M. L. Osowski; C. Panja; P. T. Rudy; T. Stakelon; J. E. Ungar

doi:10.1117/12.666259

12 May 2006 Advances in high-brightness high-power semiconductor lasers

R. M. Lammert, S. W. Oh, M. L. Osowski, C. Panja, P. T. Rudy, T. Stakelon, J. E. Ungar

Proceedings Volume 6216, Laser Source and System Technology for Defense and Security II; 62160B (2006) https://doi.org/10.1117/12.666259
Event: Defense and Security Symposium, 2006, Orlando (Kissimmee), Florida, United States

Abstract

We present recent advances in high power semiconductor laser bars and arrays at wavelengths from the near infrared to the eye-safe regime including increased spectral brightness with internal gratings to narrow and stabilize the spectrum, increased spatial brightness with multimode and high power single mode performance, and reduced cost architectures from high power surface emitting 2-dimensional arrays. These devices have the potential to dramatically improve diode pumped systems and enable new direct diode applications.

Citation Download Citation

R. M. Lammert, S. W. Oh, M. L. Osowski, C. Panja, P. T. Rudy, T. Stakelon, and J. E. Ungar "Advances in high-brightness high-power semiconductor lasers", Proc. SPIE 6216, Laser Source and System Technology for Defense and Security II, 62160B (12 May 2006); https://doi.org/10.1117/12.666259

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