Autler-Townes splitting of excitons and biexcitons in semiconductors

P. I. Khadzhi; L. Yu. Nadkin; D. V. Tkachenko

doi:10.1117/12.677871

14 June 2006 Autler-Townes splitting of excitons and biexcitons in semiconductors

P. I. Khadzhi, L. Yu. Nadkin, D. V. Tkachenko

Proceedings Volume 6259, ICONO 2005: Nonlinear Optical Phenomena; 625909 (2006) https://doi.org/10.1117/12.677871
Event: ICONO 2005, 2005, St. Petersburg, Russian Federation

Abstract

The behavior of the semiconductor dielectric susceptibility under the stationary action of a strong laser pulse in the range of M-band of luminescence and the test pulse in the exciton range of spectrum is investigated. The well pronounced Autler-Townes effect occurs at the exciton range. The position of the absorption peaks is determined by the amplitude and frequency of pump pulse.

Citation Download Citation

P. I. Khadzhi, L. Yu. Nadkin, and D. V. Tkachenko "Autler-Townes splitting of excitons and biexcitons in semiconductors", Proc. SPIE 6259, ICONO 2005: Nonlinear Optical Phenomena, 625909 (14 June 2006); https://doi.org/10.1117/12.677871

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