Laser annealing of implanted silicon carbide and Raman characterization

I. Zergioti; A. G. Kontos; K. Zekentes; C. Boutopoulos; P. Terzis; Y. S. Raptis

doi:10.1117/12.669497

7 June 2006 Laser annealing of implanted silicon carbide and Raman characterization

I. Zergioti, A. G. Kontos, K. Zekentes, C. Boutopoulos, P. Terzis, Y. S. Raptis

Proceedings Volume 6261, High-Power Laser Ablation VI; 626135 (2006) https://doi.org/10.1117/12.669497
Event: High-Power Laser Ablation 2006, 2006, Taos, NM, United States

Abstract

Pulsed-laser-based methods have been applied for post-implant annealing of p-type Al doped 4H-SiC wafers in order to restore the crystal structure and to electrically activate the doping species. The annealing was performed with the second (532nm) and third (355nm) harmonic of a Nd:YAG laser at 4ns pulse duration. The epilayers were characterized by micro-Raman spectroscopy under surface and cross sectional backscattering. Changes in the phonon mode-intensity were related to the laser annealing induced recrystallization of the implanted material. The results were compared with changes in the infrared reflectivity across the Restsrahlen band.

Citation Download Citation

I. Zergioti, A. G. Kontos, K. Zekentes, C. Boutopoulos, P. Terzis, and Y. S. Raptis "Laser annealing of implanted silicon carbide and Raman characterization", Proc. SPIE 6261, High-Power Laser Ablation VI, 626135 (7 June 2006); https://doi.org/10.1117/12.669497

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