Paper
20 May 2006 Robust OPC technique using aerial image parameter
Mikio Oka, Shinichiro Suzuki, Kazuyoshi Kawahara, Kensuke Tsuchiya, Kazuhisa Ogawa, Hidetoshi Ohnuma
Author Affiliations +
Abstract
The mainstream of resolution enhancement techniques (RET) to critical layers is model-based optical-proximity-effect-correction (OPC) at the 90-nm node and below. For model-based OPC, the simulation model is calibrated using a test pattern transferred onto the wafer on a best dose and best focus condition, so process variations (i.e. focus, exposure dose, etc) cause pinching or bridging (open or short error), otherwise called a hotspot. The technique of reducing hotspots by sub-resolution assist features (SRAFs) and litho-friendly layout are already proposed. However, these methods sometimes cannot improve hotspots by design layouts or the post-OPC shapes. We have developed the technique which improves hotspots by additional modification to the post-OPC patterns of hotspots.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mikio Oka, Shinichiro Suzuki, Kazuyoshi Kawahara, Kensuke Tsuchiya, Kazuhisa Ogawa, and Hidetoshi Ohnuma "Robust OPC technique using aerial image parameter", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 628333 (20 May 2006); https://doi.org/10.1117/12.681821
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CITATIONS
Cited by 2 scholarly publications and 3 patents.
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KEYWORDS
Optical proximity correction

Image processing

SRAF

Lithography

Model-based design

Resolution enhancement technologies

Scanning electron microscopy

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