Four-sections semiconductor two-mode laser for THz generation

Laurent Chusseau; Abraham Akwoue Ondo; Jérémi Torres; Philippe Nouvel; Joel Jacquet; Monique Thual

doi:10.1117/12.708011

8 September 2006 Four-sections semiconductor two-mode laser for THz generation

Laurent Chusseau, Abraham Akwoue Ondo, Jérémi Torres, Philippe Nouvel, Joel Jacquet, Monique Thual

Proceedings Volume 6343, Photonics North 2006; 63433H (2006) https://doi.org/10.1117/12.708011
Event: Photonics North 2006, 2006, Quebec City, Canada

Abstract

The stable two-mode operation of a 4-sections semiconductor laser emitting at 1.55 μm is experimentally demonstrated and analysed. An interpretation of the two-mode regime involving a saturable absorber is theoretically developed and the characteristic parameters of this saturable absorber deduced. This work exhibits the possibility of terahertz wave generation by photomixing using this device.

Citation Download Citation

Laurent Chusseau, Abraham Akwoue Ondo, Jérémi Torres, Philippe Nouvel, Joel Jacquet, and Monique Thual "Four-sections semiconductor two-mode laser for THz generation", Proc. SPIE 6343, Photonics North 2006, 63433H (8 September 2006); https://doi.org/10.1117/12.708011

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