Diode-pumped Q-switched Nd:YVO<sub>4</sub> laser with a low-temperature-grown GaAs saturable absorber

Yu Gan; WangHua Xiang; ZhiGang Zhang; YongGang Wang; QiChang Jiang; Zhuang Zhuo

doi:10.1117/12.693399

10 June 2006 Diode-pumped Q-switched Nd:YVO₄ laser with a low-temperature-grown GaAs saturable absorber

Yu Gan, WangHua Xiang, ZhiGang Zhang, YongGang Wang, QiChang Jiang, Zhuang Zhuo

Proceedings Volume 6344, Advanced Laser Technologies 2005; 63440D (2006) https://doi.org/10.1117/12.693399
Event: Advanced Laser Technologies 2005, 2005, Tianjin, China

Abstract

A stable passively Q-switched Nd: YVO₄ laser was demonstrated by use of a GaAs absorber grown at a low temperature (LT GaAs absorber) by the Metal Organic Chemical Vapor Deposition (MOCVD) technique, as well as an output coupler. The shortest pulse duration measured was about 12 ns with a single-pulse energy of 4.84 μJ, and the highest average output power is 1.16 W. The repetition rate is 360 KHz, which corresponds to the pump power of 2.8W.

Citation Download Citation

Yu Gan, WangHua Xiang, ZhiGang Zhang, YongGang Wang, QiChang Jiang, and Zhuang Zhuo "Diode-pumped Q-switched Nd:YVO₄ laser with a low-temperature-grown GaAs saturable absorber", Proc. SPIE 6344, Advanced Laser Technologies 2005, 63440D (10 June 2006); https://doi.org/10.1117/12.693399

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available