Paper
6 October 2006 Nanocrystal silicon light emitting devices
Author Affiliations +
Proceedings Volume 6352, Optoelectronic Materials and Devices; 63521T (2006) https://doi.org/10.1117/12.688243
Event: Asia-Pacific Optical Communications, 2006, Gwangju, South Korea
Abstract
An electrically driven light emission from silicon is a long-standing problem in silicon photonics. Recently, significant progress has been made using silicon quantum dots embedded in silicon nitride thin films, transparent doping layers and electrodes, and surface modified structures. This paper provides an overview of progress in the device physics and fabrications of the nanocrystal silicon light emitting diodes including new device structures to improve the light extraction efficiency as well as highlights in growth of silicon quantum dots and their quantum confinement effects.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gun Yong Sung, Kyung-Hyun Kim, Chul Huh, and Jae Heon Shin "Nanocrystal silicon light emitting devices", Proc. SPIE 6352, Optoelectronic Materials and Devices, 63521T (6 October 2006); https://doi.org/10.1117/12.688243
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KEYWORDS
Silicon

Quantum dot light emitting diodes

Light emitting diodes

Electroluminescence

Silicon films

Silver

Amorphous silicon

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