An ultrafast Geiger-mode single-photon avalanche diode in 0.18-&#956;m CMOS technology

Hod Finkelstein; Mark J. Hsu; Sadik Esener

doi:10.1117/12.705259

3 November 2006 An ultrafast Geiger-mode single-photon avalanche diode in 0.18-μm CMOS technology

Hod Finkelstein, Mark J. Hsu, Sadik Esener

Proceedings Volume 6372, Advanced Photon Counting Techniques; 63720W (2006) https://doi.org/10.1117/12.705259
Event: Optics East 2006, 2006, Boston, Massachusetts, United States

Abstract

We demonstrate a new single-photon avalanche diode (SPAD) device, which utilizes the silicon-dioxide shallow-trench isolation (STI) structure common to all deep-submicron CMOS technologies, both for junction planarization and as an area-efficient guard-ring. This makes it possible to achieve an order-of-magnitude improvement in fill factor and a significant reduction in pixel area compared with existing CMOS SPADs, and results in improved SPAD performance. We present numerical simulations as well preliminary experimental results from a test chip, which was manufactured in an IBM 0.18 μm CMOS technology, and which incorporates the devices. With these new and efficient structures, 12 μm-pitch pixels with sub-10ns dead times are achievable without requiring active recharge, creating the opportunity to integrate large arrays of these ultra-fast SPADs for use in biological imaging systems.

Citation Download Citation

Hod Finkelstein, Mark J. Hsu, and Sadik Esener "An ultrafast Geiger-mode single-photon avalanche diode in 0.18-μm CMOS technology", Proc. SPIE 6372, Advanced Photon Counting Techniques, 63720W (3 November 2006); https://doi.org/10.1117/12.705259

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