Effect of annealing temperature on the formation of silicon nanocrystals in a nitride matrix

Giuseppe Scardera; Tom Puzzer; Ed Pink; Gavin Conibeer; Martin A. Green

doi:10.1117/12.695760

20 December 2006 Effect of annealing temperature on the formation of silicon nanocrystals in a nitride matrix

Giuseppe Scardera, Tom Puzzer, Ed Pink, Gavin Conibeer, Martin A. Green

Proceedings Volume 6415, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III; 641502 (2006) https://doi.org/10.1117/12.695760
Event: SPIE Smart Materials, Nano- and Micro-Smart Systems, 2006, Adelaide, Australia

Abstract

Superlattices of silicon nanocrystals or quantum dots (QDs) are fabricated by depositing alternating layers of stoichiometric and sub-stoichiometric silicon nitride by dual-mode PECVD and subsequent high temperature annealing. NH₃, SiH₄ and Ar are used as processing gases. The formation of QDs is monitored for varying annealing temperatures using TEM and GI-XRD. Samples composed of 50 bi-layers are grown under the same conditions and annealed for two hours at temperatures ranging between 600 and 1150°C. A 50 bi-layer superlattice structure of silicon nanocrystals with an estimated average grain size of approximately 4 nm was achieved at 1000°C. The use of FTIR spectroscopy as a complementary technique for verifying the formation of silicon nanocrystals in a nitride matrix is investigated. The IR absorbance spectra for samples containing silicon nanocrystals show a distinct shoulder at 1080 cm^-1corresponding to the Si-O-Si stretching mode possibly due to oxidation. Preliminary evidence is also presented showing the possible formation of α-Si₃N₄ nanocrystals at 1100 and 1150°C.

Citation Download Citation

Giuseppe Scardera, Tom Puzzer, Ed Pink, Gavin Conibeer, and Martin A. Green "Effect of annealing temperature on the formation of silicon nanocrystals in a nitride matrix", Proc. SPIE 6415, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III, 641502 (20 December 2006); https://doi.org/10.1117/12.695760

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