Paper
20 December 2006 Analysis of low-dimensional semiconductor nanostructures with a self-consistent iterative scheme
Author Affiliations +
Proceedings Volume 6415, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III; 64150A (2006) https://doi.org/10.1117/12.720660
Event: SPIE Smart Materials, Nano- and Micro-Smart Systems, 2006, Adelaide, Australia
Abstract
In this contribution we propose an iterative scheme for the solution of the coupled Poisson-Schroedinger system in a self-consistent manner. The developed methodology allows us to analyze the combined effects of piezoelectricity, spontaneous polarization, and the charge density in low-dimensional semiconductor nanostructures. These effects are analyzed here on an example of a wurtzite type semiconductor heterojunction. It is shown that such effects may influence substantially the electronic states and quasi-Fermi level energies of the nanostructures, in particular when compared to one-step calculations based on the conventional schemes. A major emphasis is given to two different types of mechanical boundary conditions.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Roy Mahapatra and Roderick V. N. Melnik "Analysis of low-dimensional semiconductor nanostructures with a self-consistent iterative scheme", Proc. SPIE 6415, Micro- and Nanotechnology: Materials, Processes, Packaging, and Systems III, 64150A (20 December 2006); https://doi.org/10.1117/12.720660
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KEYWORDS
Nanostructures

Semiconductors

Heterojunctions

Aluminum nitride

Polarization

Gallium nitride

Optoelectronics

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