Reflectance-difference spectroscopy as an optical probe for the in situ determination of doping levels in GaAs

A. Lastras-Martínez; I. Lara-Velázquez; R. E. Balderas-Navarro; J. Ortega-Gallegos; L. F. Lastras-Martínez

doi:10.1117/12.742363

16 May 2007 Reflectance-difference spectroscopy as an optical probe for the in situ determination of doping levels in GaAs

A. Lastras-Martínez, I. Lara-Velázquez, R. E. Balderas-Navarro, J. Ortega-Gallegos, L. F. Lastras-Martínez

Author Affiliations +

Proceedings Volume 6422, Sixth Symposium Optics in Industry; 64221H (2007) https://doi.org/10.1117/12.742363
Event: Sixth Symposium Optics in Industry, 2007, Monterrey, Mexico

Abstract

We report on in situ Reflectance Difference Spectroscopy measurements carried out on GaAs (001). Measurements were performed at temperatures of 580 °C and 430 °C, in both n and p-type doped films and for both (2x4) and c(4x4) reconstructions. Samples employed were grown by Molecular Beam Epitaxy with doping levels in the range from 10¹⁶ - 10¹⁹ cm^-3. We demonstrate the potential of Reflectance Difference Spectroscopy for impurity level determinations under growth conditions.

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A. Lastras-Martínez, I. Lara-Velázquez, R. E. Balderas-Navarro, J. Ortega-Gallegos, and L. F. Lastras-Martínez "Reflectance-difference spectroscopy as an optical probe for the in situ determination of doping levels in GaAs", Proc. SPIE 6422, Sixth Symposium Optics in Industry, 64221H (16 May 2007); https://doi.org/10.1117/12.742363

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